| PART |
Description |
Maker |
| SGB35UFSMSS SGB35UFSMSTX SGB35UFSMSTXV SGB10UFSMS |
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
0.06 A, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| 2N700007 2N7000RLRPG 2N7000 2N7000G 2N7000RLRA 2N7 |
Small Signal MOSFET 200 mAmps, 60 Volts N?Channel TO?92 200 mAMPS 60 VOLTS
Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS
|
ONSEMI[ON Semiconductor]
|
| NTES1P02 NTES1P02-D |
P?Channel Power MOSFET
Power MOSFET 50 mAmps, 20 Volts P-Channel(50mA,20V,P沟道增强型MOS场效应管)
Power MOSFET 50 mAmps, 20 Volts P-Channel SC-75
|
ON Semiconductor
|
| 2N7002DW1T1 |
115 mAmps,60 Volts
|
WILLAS ELECTRONIC CORP
|
| LBSS138DW1T1G S-LBSS138DW1T1G LBSS138DW1T3G |
Power MOSFET200 mAmps, 50 Volts N?Channel SC-88
|
Leshan Radio Company
|
| 2N7002TL-AN3-R 2N7002TG-AN3-R |
300 mAmps, 60 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
Leshan Radio Company
|
| LBSS138LT1 LBSS138LT1G |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
乐山无线电股份有限公
|
| 2N7000G11 |
Small Signal MOSFET 200 mAmps, 60 Volts N.Channel TO.92
|
ON Semiconductor
|
| SPD649-1TXV SPD645-1 SPD645-1S SPD645-1SMS SPD645- |
400 mAMPS 225 Α 600 VOLTS STANDARD RECOVERY RECTIFIER
400 mAMPS 225 ─ 600 VOLTS STANDARD RECOVERY RECTIFIER
|
Solid States Devices, I...
SSDI[Solid States Devices, Inc]
|
| 2N7002LT1 |
Small Signal MOSFET 115 mAmps, 60 Volts N?Channel SOT?3
|
WILLAS ELECTRONIC CORP
|
| L2N7002LT1G11 L2N7002LT3G |
Small Signal MOSFET 115 mAmps, 60 Volts N?Channel SOT?3
|
Leshan Radio Company
|
